Pc1d example problem series#

Today we're going to mainly be focused on short circuit current and things like internal quantum efficiency, which are highly affected by our diffusion length. We talked a little bit last lecture about fill factor and how that's influenced by different resistive losses in our solar cell. Now we can split up that again into open circuit voltage, short circuit current, and fill factor. And that gives our output energy, or output power, and we divide that by the input power, which is the solar insulation. Again, we talked about our GSC, our short circuit current, our open circuit voltage, and our fill factor. And our efficiency, there's several parameters that go into it. What this is saying what's the thing we care about most in our solar cells? Well, as scientists, other than dollars per watt, we want to maximize our efficiency for a certain price. So the weakest aspect of your solar cell is really what's going to limit your device performance, and especially if any of you here are trying to make devices, it's really important to think about all of these things when building it.

And it's always important to remember that your device is like a leaky bucket, and you're limited by the largest hole in that bucket. And again, this is kind the progress we've made, so we're almost all the way through explaining basic device physics and basic semiconductor physics so you can understand simple devices. And so that is coming in the future, but we're still doing fundamentals today.ДЄnd so I know you're probably all aware of this equation. So we're going to complete this in probably the next three lectures and then move on to a lot of the kind of cross cutting themes in PV- some advanced concepts, different device architectures, and that kind of thing. I'm sure you guys are loving this right now. So we've been talking a lot about the fundamentals. Today we're going to talk a lot about different material properties and how they affect certain device characteristics, and mainly just affect our output efficiency.

Pc1d example problem series#

So today- our last lecture we talked about different device parameters, mainly our series resistance and shunt resistance, and how that affects our efficiencies. PROFESSOR: All right, so let's get started.

To make a donation or view additional materials from hundreds of MIT courses, visit MIT OpenCourseWare at. Your support will help MIT OpenCourseWare continue to offer high quality educational resources for free. From performed calculations, we established that value of incident radiation (q) (and, as result, interior quantum efficiency of the photodiode) can be determined with 0.014% accuracy.The following content is provided under a Creative Commons license. Search for absolute minimum among many local minimums was done through method of consecutive approximations toward the minimum of mean square deviation. A special algorithm to find the absolute minimum is presented in this article. Hill climbing algorithm was used to find local minimums. The problem consists of the fact that there is an infinite set of local minimums corresponding to the selected initial points in a 5-dimensional space of variables. Variation range represented almost one order of magnitude. For 'experimental' curves we used dependencies derived from voltage-current characteristics calculated by PC1D with nominal parameters values. The shape of doping profile was figured in the form of complimentary error function. The inverse problem solution consisted in determination of following parameters of the photodiode: intensity of incident radiation (q), background doping value (n), peak value of front doping (N), depth factor (L) and front surface recombination velocity (S). It was necessary that reflection coefficient of the front surface of the photodetector is known. For our research we chose a silicon photodetector Hamamatsu 1337.

This paper, for the first time, suggests a method of determining internal quantum efficiency of an opaque p+nn+ photodetector and some of its characteristics based on a comparison between experimental measurements of photodetector's voltage-current characteristics and characteristics calculated with PC1D. Mikryukov, Aleksey Kovalev, Alexander Liberman, Anatoly A. Determination of internal quantum efficiency of a photodetector through its voltage-current characteristics Determination of internal quantum efficiency of a photodetector through its voltage-current.